BLF6G10LS-135R

Datasheets:BLF6G10(LS)-135R SOT502 BPCN Assembly Origin:RF Power Transistors Transfer PCN Packaging:Date Code Extended Standard Package:20 Category:Discrete Semiconductor Products Family:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dB Voltage – Test:28 VCurrent Rating:32A Noise Figure:-Current – Test:950mA Power – Output:26.5W Voltage – Rated:65V Package / Case:SOT-502BSupplier Device Package:SOT 502B Dynamic Catalog:RF HEMT HFET LDMOS FETsOther 
NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, BLF6G10LS-135R supplier 

Product Category: RF MOSFET Transistors BLF6G10LS-135RManufacturer: NXP RoHS: RoHS Compliant YESTransistor Polarity: N-Channel Id – Continuous Drain Current: 32 A Vds – Drain-Source Breakdown Voltage: 65 V Rds On – Drain-Source Resistance: 100 mOhms Technology: Si Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT502B Packaging: Tube Brand: NXP Semiconductors Channel Mode: Enhancement Configuration: Single Height: 4.72 mm Length: 20.7 mm Minimum Operating Temperature: – 65 C Factory Pack Quantity: 20 Type: RF Power MOSFET Vgs – Gate-Source Voltage: 13 V Width: 9.91 mm Part # Aliases: BLF6G10LS-135R,112
RF MOSFET Transistors LDMOS TNS
Shunlongwei Inspected every BLF6G10LS-135R before Ship, All BLF6G10LS-135R with 6 months warranty.

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